cmo教材资料s工艺流程讲解.pptVIP

Content 0.5um CMOS process flow cross section 0.18um CMOS process flowcross section PCM introduction 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section 0.18um Process Cross section PCM PCM就是Process Control Monitor的简称； 同时，PCM也称为WAT：Wafer Accept Test； PCM --Purpose PCM 主要把线上一些工艺异常进行及时的反映，在产品入库前对其进行最后一道质量的检验，其作用归纳起来，主要有如下几点： （1）对产品进行参数质量检验； （2）监控在线工艺对电参数的影响，以及工艺的波动； （3）判定WAFER PASS/FAIL的一个重要依据，客户会根据PCM 测试情况，决定接收、或拒收WAFER。 (4) Yield analysis PCM – key items （1）Vt （2) BVD （3）Ion （4）Leakage （5）Sheet Rs （6）Rc （7）Capacitor (8) Others PCM – Test Location PCM—MOS Transistor PCM –Vt measure PCM– BVD maesure PCM– Leakage measure PCM – I-V curve PCM – InterPoly Capacitor PCM – Poly Rs PCM– NW Rs PCM – N+ Rs PCM – P+ Rs PCM – P+/NW PCM – N+/Psub PCM --LPNP PCM -- VPNP Thanks! Metal-1 IMD-1 A-Si Pwell NAPT Nwell PAPT VTP Poly PSD NSD NSD NSD PSD PSD W W W W ILD Trench oxide Metal-4 IMD-4 W W W IMD-5 Metal-6 IMD-3 W W Metal-2 IMD-2 Metal_5 W W W W W W W W METAL POLY2 POLY1 POLY2 POLY1 FOX P-SUB W (Capacitor Width) L (Capacitor Length) CAPACITOR CAPACITOR W L P Substrate L W P Substrate High Resistor layer Poly1 Metal1 Poly1 ( Low Rs ) ( High Rs ) Poly Resistor Marking layer P-SUB N Well Metal N+ Contact NCOMP (N+ implant) Nwell L N+ Nwell Resistor Marking Layer P-SUB Metal Contact NCOMP (N+ implant) L N+ N+ Resistor Marking Layer P-SUB Metal PCOMP (P+ implant) Nwell L P+ Nwell PCOMP (P+ implant) P-SUB N Well Metal P+ N+ Contact NCOMP (N+ implant) Nwell W1 L1 W2 L2 NCOMP (N+ implant) P-SUB Metal N+ P+ Contact PCOMP (P+ implant) Nwell W1 L1 W2 L2 P+ P+ P+ N+ N+ NWell