大容量数据存储器AT45DB041.pdfVIP

Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible • Page Program Operation – Single Cycle Reprogram (Erase and Program) – 2048 Pages (264 Bytes/Page) Main Memory • Supports Page and Block Erase Operations • Two 264-byte SRAM Data Buffers – Allows Receiving of Data while Reprogramming of Nonvolatile Memory • Continuous Read Capability through Entire Array • Low Power Dissipation 4-megabit – 4 mA Active Read Curre