BiFeO3外延薄膜曰电容器与异质结的制备和性能研究.docx

优秀毕业论文 精品参考文献资料 AbstractAbstract Abstract Abstract BiFe03(BFO)with a perovskite-type structure is nOW perhaps in the future the only single—phase material that is both magnetic and a strong ferroelectric at room temperature，TN2673K，Tc2l 1 03K．Great prospect captured the imagination worldwide． The residual polarization of BFO(Pr)reach up to 90·1 00／．t C／cm2，which provides an alternative choice of a lead—free ferroelectric material．How because the pure phase BFO bulk and film preparation conditions are relatively harsh，and there is a large leakage current，it is difficult to obtain saturated hysteresis loop．Chemical—doping can improve the leakage performance．The optical band—gap of BFO is 2．8eV that means at wavelength of 500nm or more in the visible region BFO is transparent．So it is useful in invisible electronic circuits． In this thesis Pulsed Laser Deposition method Was used to deposit thin films．A mature technology of obtaining pure BFO thin film is at OUr disposal．Epitaxial and transparent ferroelectric capacitor was successfully fabricated by employing a new transparent conductive oxide La0．07Sro 93SN03 as electrode．Leakage Was greatly suppressed with Mn-doping as a result the ferroelectric properties were improved．The junctions using hetero··epitaxial n-LSSOXp·-BFO(BFMO)were proposed and examined．We demonstrated that they show good rectifying characteristics and resistive hysteresis．The I—V results of adjusting the thickness of BFO thin films and Mn—doping reveal rectifying characteristics and resistive hysteresis related to oxygen vacancies of BFO；The stress relief mechanisms in epitaxial Lao．7Sro．3Mn03(LSMO，a common electrode materials)grown on LAST(OO 1)，NGO(00 1)and NGO(1 1 0) substrates were investigated，also． The dissertation consists of five chapters，the arrangement of the chapters and the main contents in each chapter are presented as follows： In chapter 1，first we make a brief introduction to the perovskite structure including crystal structure，la