AlGaInP与进GaNLED电极形状的优化设计.docx

优秀毕业论文 精品参考文献资料 张俊兵：AlGaInP 张俊兵：AlGaInP与GaN LED【乜极形状的优化没计 Abstract Electrode shape determines current spreading capacity of the chip，and directly affects the photoelectric properties．Optimized electrode shape can have better。current spreading capacity,more uniform current distribution，smaller current crowding effect， operating voltage，series resistance，Joule heat and red shi ft，and longer life．At the same time，compared with other methods for improving effi ciency of the chip，such as surface roughening，substrate lift—off,wafer bonding，high reflection metal film，optimization electrode shape could be the most the most worthwhi le to study．Because this method has the following several benefits：Firstly,operation is simple，without added special process steps．Secondly,it doesn’t need to purchase specialized equipment，SO implementation is easy．Thirdly,after replacing lithography mask，the efficiency can be improved under the same cost of production．Therefore，in this paper we use MATLAB to simulate affecting factors and distribution of quaternary AIGalnP LED’S output efficiency,and optimize the traditiofial-cii-cular electrode．Also，with Crossli曲t APSYS software thirteen electrode shapes for GaN LED were simulated，and the effect of electrode shapes on the photoelectric performance was studied by chip manufacture experiments．The detail main contents ale following two parts： 1、We use finite element method to simulate affecting factors and distribution of quaternary AIGalnP LED’S output efficiency of light with transparent electrode，and found that the thickness of window layer and size of the chip have important impact on them．With thickness increasing，the surface’S output efficiency of light decrease a little， but the sides’output efficiency of light increase a lot，SO the overall output efficiency of light presents rise a trend；and as increasing the thickness of window layeh the chip’S hi曲est output efficiency of light distribution area move to the center from four right angle