信息检索课程.docVIP

PAGE 信息检索 专题文献综述报告 院 系 名 称 计算机学院 院 队 名 称 六院六队 学 号 G 姓 名 刘 明 完 成 时 间 2013年12月  Ⅰ.综述前工作 1.检索课程名称 建立SiGe沟道pMOSFET的阈值电压模型 2.检索策略 2.1选择检索工具 美国工程索引（EI） 中国期刊全文数据库（CNKI） 百度 2.2选择检索词与检索年限 中文检索词 外文检索词 阈值电压模型 Threshold voltage model P型金属氧化物半导体场效应管 pMOSFET or PMOSFET or p-MOSFET or P-MOSFET 锗硅沟道 SiGe channel 检索年限 2004~2013 3.检索步骤及检索结果 3.1.美国工程索引（EI） 3.1.1.检索式 Thre* voltage model wn ti and (PMOSFET or pMSOFET or P-MOSFET or p-MOSFET) wn ab and SiGe chan* wn all 3.1.2.检索年限 2004-2013 3.1.3.检索结果 命中 6 条结果，经过筛选，选择其中1条如下： Accession number: 20083411474958 Title: Threshold voltage model for strained SiGe channel PMOSFET Authors: Xu, Jing ping; Su, Shao bin; Zou, Xiao Author affiliation: Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China Corresponding author: Xu, J. (jpxu@mail.hust.edu.cn) Source title: Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics Abbreviated source title: Guti Dianzixue Yanjiu Yu Jinzhan Volume: 28 Issue: 2 Issue date: June 2008 Publication year: 2008 Pages: 180-184+234 Language: Chinese ISSN:CODEN: GDYJE2 Document type: Journal article (JA) Publisher: Research Progress of Solid State Electronics, P. O. Box 1601, Nanjing Abstract: The 1-D threshold voltage model of strained SiGe channel PMOSFET is proposed first. Then based on the 1-D model, a quasi-2-D threshold voltage model for short-channel devices is built by considering the lateral electric field in channel. The simulation results match well with 2-D numerical simulated results. Using this model, influences of various structure parameters on threshold voltage of the devices are simulated and analyzed, and also threshold voltage of devices without Si cap layer is discussed. Number of references: 11 Main heading: Threshold voltage Controlled terms: Electri