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OPA656-DIE
ZHCS797–MARCH2012
宽频带、单位增益稳定、场效应晶体管(FET输入运算放大器
查询样品:OPA656-DIE
特性
单位增益带宽低输入偏置电流低偏移和漂移低DL
高输出电流低输入电压噪声
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应用范围
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宽频带光电二极管放大器采样保持缓冲器
电器耦合元件(CCD输出缓冲器模数转换器(ADC输入缓冲器宽频带精度放大器测试和测量前端
说明
OPA656结合有一个超宽频带、单位增益稳定、电压反馈运算放大器,此运算放大器有一个FET 输入级以提供一个针对ADC (模数转换器)缓冲和跨阻应用的超高动态范围放大器。极低的DC 误差在光学应用中提供了很好的精度。
高单位增益稳定带宽和JFET 输入可在高速、低噪声积分器中实现出色的性能。
ORDERING INFORMATION (1
PRODUCT OPA656(1(2
PACKAGE DESIGNATOR
TD
PACKAGE (2Bare die in waffle pack
ORDERABLE PART NUMBER
OPA656TDB1OPA656TDB2
PACKAGE QUANTITY
40010
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at .
Processing is per the Texas Instruments commercial production baseline and is in compliance with the Texas Instruments Quality Control System in effect at the time of manufacture. Electrical screening consists of DC parametric and functional testing at room temperature only. Unless otherwise specified by Texas Instruments AC performance and performance over temperature is not warranted. Visual Inspection is performed in accordance with MIL-STD-883Test Method 2010Condition B at 75X minimum.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright ?2012, Texas Instruments Incorporated
English Data Sheet:SBOS596
OPA656-DIE
ZHCS797–MARCH2012
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradatio
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