垂直腔面发射激光器的热学特性.docVIP

810 半　 导　 体　 学　 报 第 26 卷 VCSEL 中的温度升高 ,高温中心的位置也将发生相 of elect rical conductivit y across InP to GaAs wafer2f used in2 terfaces. Jpn J Appl Phys ,1999 ,38 (2B :1111 [9 ]　 Sagalowicz L ,Rudra A , Kapon E ,et al . Defect s ,st ruct ure ,and chemist ry of InP2 GaAs interfaces obtained by wafer bonding. J Appl Phys ,2000 ,87 (9 :4135 [ 10 ] 　Ram R J ,Dudley J J ,Bowers J E ,et al . GaAs to InP wafer f u2 sion. J Appl Phys ,1995 ,78 (6 :4227 [ 11 ] 　Hadley G R ,Lear K L ,Warren M E ,et al . Comprehensive nu2 merical modeling of vertical2cavit y surface2emitting lasers. IEEE J Quant um Elect ron ,19