应用于x波段的0.2um v型栅槽algangan hemt.pdfVIP

Vol. 33,No. 3 JournalofSemiconductors March2012 AlGaN/GaN HEMTswith 0.2 mV-gaterecessesfor X-band application WangChong(王冲) ,He Yunlong(何云龙),Zheng Xuefeng(郑雪峰),Hao Yue(郝跃), Ma Xiaohua(马晓华),and Zhang Jincheng(张进城) KeyLaboratory of WideBand gap Semiconductor Materials and Devices,SchoolofMicroelectronics, Xidian University,Xi’an 710071, China Abstract: AlGaN/GaN HEMTs with 0.2 m V-gate recesses were develo