氮化镓器件性能分析及集成电路设计.docVIP

PageI PageI PageI 河 北 工 业 大 学 毕业设计说明书 作 者： 学 号： 学 院： 系(专业)： 电子科学与技术 题 目： GaN器件性能分析及集成电路设计 指导者： 教授 评阅者： 副教授 2012年6月2日 河北工业大学2012届本科毕业设计说明书 毕业设计（论文）中文摘要 GaN器件性能分析及集成电路设计 摘要： 宽禁带半导体材料GaN 以其独特的半导体特性而受到广泛关注。而在GaN材料构成的器件中，GaN MOSFET器件由于其应用在高温、高频、大功率等方面的优越性，受到越来越多的重视。 利用已知的GaN材料参数进行Matlab仿真并创建GaN MOSFET的PSPICE模型，对其进行输出特性和转移特性等方面的研究，从理论上分析GaN MOSFET的器件性能。主要内容包括：设定的器件外部参数条件，GaN nMOSFET在室温下的阈值电压为0.12V，当VGS为8V时，得到器件的饱和漏电流约为24mA左右；室温下对GaN MOSFET 器件直流特性进行模拟，分析了关键结构技术参数沟道掺杂浓度、栅长对转移特性和输出特性的影响；GaN MOSFET 器件温度特性的模拟，仿真得到在 300K 到 500K 温度范围内GaN MOSFET的转移特性和输出特性；在反馈放大电路中应用GaN MOSFET的PSPICE模型进行仿真。 关键词：GaN MOSFET Matlab PSPICE 集成电路 河北工业大学2012届本科毕业设计说明书 毕业设计（论文）外文摘要 Title The analysis of GaN device and the design of integrated circuit Abstract As one of the third generation wide band gaps semiconductor materials, Gallium Nitride (GaN) abstract more and more people because of its special characteristics. Because of its ability to operate at high power，high temperature and high speed, the Gallium Nitride(GaN) and its related MOSFET device have been attracting Attention. The characteristics of GaN MOSFET has been discussed in this paper using the method of computer simulation. By building the Matlab and the PSPICE models of GaN material, we simulate DC characteristics of GaN MOSFET and the relationship between the transfer and output characteristics and the key parameters. To conclude: At room temperature, with the devices external parameters known, the GaN nMOSFET could get the threshold voltage of 0.12 V and get the saturated leakage current of 24mA when the VGS is 8V. At the room temperature ,we simulate the DC characteristic of GaN MOSFET, analyzing the relationship between the transfer and output characteristics and the key technical parameters ,such as the channel doping concentration, gate length and find that the channel doping co