化学浴沉积法制备Sb掺杂SnS薄膜.pdf

第 43 卷第 12 期 硅 酸 盐 学 报 Vol. 43 ，No. 12 2 0 1 5 年 1 2 月 JOURNAL OF THE CHINESE CERAMIC SOCIETY December ，2015 DOI ：10.14062/j.issn.0454-5648.2015.12.14 化学浴沉积法制备Sb 掺杂SnS 薄膜 夏冬林，徐 俊，黄 波 (武汉理工大学，硅酸盐建筑材料国家重点实验室，武汉 430070) 摘 要：以氯化亚锡、硫代乙酰胺、三氯化锑为反应物，采用化学浴沉积法在玻璃衬底上沉积不同锑掺杂量(摩尔分数)硫化 锡(SnS:Sb)膜，研究了锑掺杂量对薄膜晶相结构、表面形貌和光电性能的影响。结果表明：锑掺杂 SnS 薄膜是具有正交结构 多晶薄膜，薄膜为纳米片组装成的花状球形颗粒。随着 Sb 掺杂量由 1.8%增加到 7.2%，其相应的禁带宽度从 0.93 eV 增加到 1.30 eV 。随着Sb 掺杂量的增加，SnS 薄膜的电阻率呈现先下降后增大趋势，当Sb 掺杂量为3.6 %时，其最小值为5.21×103 ·cm。 关键词：锑掺杂硫化锡薄膜；化学浴沉积；光电性能；Hall 效应 中图分类号：TN304 文献标志码：A 文章编号：0454–5648(2015)12–1759–06 网络出版时间：2015–11–19 11:29:00 网络出版地址：/kcms/detail/11.2310.TQ1129.009.html Preparation of Sb-doped SnS Thin Films Deposited via Chemical Bath Deposition XIA Donglin , XU Jun , HUANG Bo (Wuhan University of Technology, State Key Laboratory of Silicate Materials for Architectures, Wuhan 430070, China) Abstract: Sb-doped tin sulphide (SnS:Sb) thin films with different antimony contents (in mole fraction) were grown on a glass substrate via chemical bath deposition. The precursor solution was prepared from tin (II) chloride, thioacetamide and antimony trichloride. The influence of the content of Sb-doped on the crystal structure, morphology and photoelectric property was investigated. The results indicate that the films are polycrystalline SnS:Sb with the orthorhombic structure. The nanoflakes assembled flower-like spherical grains occur on the surface. The optical energy band gap value range from 0.93 to 1.3 eV were determined based on the transmittance spectra. The resistivity of SnS:Sb film firstly decreases