适用于间接矩阵变换器的IGBT驱动保护电路设计.docVIP

适用于间接矩阵变换器的IGBT驱动保护电路设 计 梅杨，常娜卿，李正熙 （北方工业大学电力电子与电气传动工程中心，北京100144） 摘要：本文针对间接矩阵变换器中开关器件多，电路拓扑复杂的特点，设计了一种适用于间接矩阵变换器的绝缘栅双极型晶体管IGBT（Insulated Gate Bipolar Transistor）的驱动保护电路。该电路基于M57962厚膜电路，并设有隔离电源和阈值电压调节电路，可以有效实现矩阵式变换器各个开关器件的隔离供电，以及对各开关器件的过流保护阈值的精确控制和调节，可推广运用于不同型号的开关器件。实验结果表明IGBT器件的开通时间为350ns，关断时间为700ns，在过流保护阈值电压设定为1.45V（对应本文采用IGBT器件的工作电流为50A）时，器件可在4μs内完全关断。从而证明了本文设计的驱动保护电路可以安全可靠地实现IGBT的开通、关断和过流保护，保障系统的稳定运行。 关键词：间接矩阵变换器；绝缘栅双极型晶体管；M57962；驱动保护电路 中图分类号：TM461 文献标识码：A The Design of IGBT Driving And Protection Circuit for Indirect matrix converter Yang Mei, Naqing Chang, Zhengxi Li (Power Electronics and Motor Driving Engineering Center, North China University of Technology Beijing 100144) Abstract: A driving and protection circuit for insulated gate bipolar transistor (IGBT) is designed in this paper. This circuit is applied in the indirect matrix converter, which has much more complex topology and higher number of switching devices than conventional PWM converters. The circuit is based on M57962 hybrid integrated circuit with isolated power and threshold voltage regulator circuit, which is able to supply the isolated power for each switch device in the matrix converter and regulate the over-current protection threshold voltage of each switch device precisely. It also can be applied to different types of switching devices. The experiment results show that the turn-on time of IGBT is 350ns, and the turn-off time is 700ns. Once the over- current protection threshold voltage is set to 1.45V (that means the current is 50A), it only takes 4μs to turned off the device completely. The results demonstrate that the designed driving and protection circuit can turn on/off IGBT and realize over-current protection safely and reliably, ensuring the stable operation of the system. Key words: Indirect matrix converter; insulated gate bipolar transistor; M57962; Drive and Protection circuit 1 引言 和传统的交-直-交变换器相比，矩阵式变 换器具有输入功率因数可自由控制、能量传输可逆、无需大容量直流储能环节等优点，得[1]到国内外学者的广泛关注。其中，传统的矩阵变换器存在换流过程复杂，保护