ba0.8sr0.2tio3薄膜的溶胶凝胶法制备及表征.pdfVIP

24 1 2014 1 Volume 24 Number 1 The Chinese Journal of Nonferrous Metals January 2014 1004-0609(2014)01-0160-08 Ba Sr TiO − 0.8 0.2 3 ( 410083) −Si Pt/Ti/SiO /Si Ba Sr TiO (BST) 2 0.8 0.2 3 (TG-DSC)X (XRD) (SEM)(AFM)B1500A 800 15 min BST 30~40 nm 5.80 nm160~378 nm BST 300 nm BST Ba Sr TiO (BST)− 0.8 0.2 3 TN304 A Preparation and characterization of Ba0.8Sr0.2TiO3 thin film by sol-gel method LI Yan-hong, ZHOU Ke-chao, ZHUANG Hou-rong, ZHANG Yan, ZHANG Dou (State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China) Abstract: Ba Sr TiO (BST) ferroelectric thin films with perovskite structure were prepared on Si and Pt/Ti/SiO /Si 0.8 0.2 3 2 substrates by sol-gel method. The heat-treatment technology (TG-DSC), X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and B1500A semiconductor device analyzer were employed to analyze the phase structure, microstructure and dielectric property of the BST thin films. The results show that BST thin films with good crystallinity and high density are obtained after annealing at 800 for 15 min under oxygen atmosphere, their average grain size and root mean square roughness (RMS) are 30~40 nm and 5.80 nm, respectively. The dielectric constant and dielectric loss increase with the increase of the thic