MEM8205M6_E4.0微盟原厂规格书.pdf免费

MEM8205 N-Channel MOSFET MEM8205M6 General Description Features MEM8205 Series Dual N-channel enhancement  20V/6A mode field-effect transistor ,produced with high cell R =20mΩ@ V =4.5V,I =4.5A DS(ON) GS D density DMOS trench technology, which is especially R =21mΩ@ V =3.85V,I =3.5A DS(ON) GS D used to minimize on-state resistance. This device R =