PE29101使用Peregrine的高速FET驱动器.pdfVIP

Using Peregrine’s High-Speed FET Drivers Application Note 71 Summary This application note highlights design guidelines and circuit layout techniques when using Peregrine Semicon- ductor’s high-speed field-effect transistor (FET) drivers with enhancement-mode gallium nitride (GaN) transistors. Some basic driver principles and layout considerations are covered as well as specific application examples. Introduction The evolution of new technologies, such as wide-bandgap semiconductors (WBGs) is paving the way for smaller, faster, and more efficient power management solutions. GaN transistors are enabling applications, such as wireless power transfer (WPT), class-D audio, and light detection and ranging (LiDAR), that favor solutions offering reduced physical size, weight, and cost. One of the distinguishing features of GaN transistors is their ability to operate at much higher frequencies than silicon metal-oxide semiconductor field-effect transistors (Si MOSFETs), due to their smaller capacitance and lower on-resistance. Higher switching frequency offers the benefits of smaller magnetics. Increasing the switching frequency requires a driver with lower propagation delay, accurate matching between channels, and minimum parasitic inductance. Consequently, the driver and printed circuit board (PCB) layout require special attention. ©2018, pSemi Corporation. All rights reserved. • Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Page 1 of 18 DOC-86603-1 – (2/2018) Application Note 71 Using Peregrine’s High-Speed FET Drivers Principles of High-Speed Driver Design Gate Characteristics Enhancement-mode GaN transistors have lower operating and peak gate voltage ratings than their silicon counterparts. The recommended operating gate-source voltage for the transistor varies bas