电子研究所与光电研究所.pptVIP

* OE_50200: Compound Semiconductors Lecture 9 LED Current flow 電子研究所與光電研究所 National Dong-hwa University, Hualian, Taiwan 2008. 05.09 Outlines Design of current flow Current spreading Current crowding Current blocking Lateral injection Flip-chip packaging Current spreading layer Vertical Horizontal n p P-contact n-contact GaP window layer non-absorbing but is lattice mismatched to GaAs AlGaAs window layer is lattice matched to GaAs and it is somewhat absorbing, because of the indirect bandgap. Al is difficult to grow by MOCVD. So AlGaAs window is usually inferior. Current Spreading S