GaAs InGaAs异质结构纳米线定向生长的研究进展.pdfVIP

Optoelectronics 光电子, 2020, 10(1), 8-17 Published Online March 2020 in Hans. /journal/oe /10.12677/oe.2020.101002 Research Progress on GaAs/InGaAs Heterostructure Nanowires Directional Epitaxy Growth * Lina Zeng, Lin Li , Zaijin Li, Zhongliang Qiao, Yi Qu, Hongyan Peng College of Physics and Electronics Engineering, Hainan Normal University, Haikou Hainan th th th Received: Feb. 12 , 2020; accepted: Feb. 26 , 2020; published: Mar. 4 , 2020 Abstract Semiconductor nanowires (NWs) have potential applications in optoelectronic devices such as semiconductor lasers, nanowire-field effect transistors, solar cells and infrared photodetectors, and have consequently become a topic of intense research due to the direct bandgap and high car- rier mobility of these materials. Most of the research institutions in the world study the direction- al growth of nanowires based on nano-patterned substrate. However, it is difficult to obtain high-quality GaAs/InGaAs heterostructure nanowires due to the nanosize patterned effects. We introduce the performance advantages and development status of the GaAs/InGaAs heterostruc- ture nanowires. The research progress of directional epitaxy growth and luminescent properties of GaAs/InGaAs heterogeneous nanowires is reviewed, and its technical difficulties and develop- ment prospects are discussed. Keywords Semiconductor, Nanowires, Epitaxial Growth GaAs/InGaAs异质结构纳米线定向生长的 研究进展 * 曾丽娜，李 林 ，李再金，乔忠良，曲 轶，彭鸿雁 海南师范大学，物理与电子工程学院，海南 海口 收稿日期：2020年2月12 日；录用日期：2020年2月26 日；发布日期：2020年3月4 日 *通讯作者。 文章引用: 曾丽娜, 李林, 李再金, 乔忠良, 曲轶, 彭鸿雁. GaAs/InGaAs 异质结构纳