CMOS制造工艺流程简介.pptxVIP

2.1 CMOS制造工艺流程简介 ;Stages of IC Fabrication;? In the simplest CMOS technologies, we need to realize simply NMOS and PMOS transistors for circuits like those illustrated below.;PMOS and NMOS wafer cross section after fabrication;? ? ? ? ? ? ? ?;;? Photolithography - Mask #1 pattern alignment and UV exposure - Rinse away non-pattern PR - Dry etch the Nitride layer -- Plasma etch with Fluorine CF4 or NF4 Plasma - Strip Photoresist (H2SO4或O2 plasma);? Wet Oxide (thick SiO2) - H2O (≈ 500 nm, 90 min. @1000oC);;;? Thermal Anneal (热退火) - Repair crystal lattice structure damage due to implantation;? Photolithography - Mask #4 pattern alignment and UV exposure - Rinse away non-pattern PR;Threshold Adjustment, N-type PMOS;;;? Photolithography - Mask #6 pattern alignment and UV exposure;目标：;LDD:;? Photolithography ? Mask #8 pattern alignment;SiO2 隔离介质层;? Photolithography;? Screen Oxide Growth ? Thin SiO2 layer ~10 nm to scatter the implanted ions;? Photolithography;? N+ and P+ Drive-in;2.7 接触与局部互联的形成;? HF etch to remove thin SiO2 ? Remove screen oxide from drain, source and ploy gate regions ? Dip (浸) for a few seconds with HF; Titanium Deposition;? Photolithography ? Mask #11 pattern alignment and UV exposure ? Rinse away non-pattern PR;;? Photolithography ? Mask #12 pattern alignment and UV exposure; Via Deposition – Tungsten Plugs (插头);; ? Strip Photoresist; Multiple Metal Layers;Intel μprocessor chip;Summary of Key ideas;作业：MEMS 器件制备;9、青少年是一个美好而又是一去不可再得的时期，是将来一切光明和幸福的开端。。8月-218月-21Wednesday, August 25, 2021 10、人的志向通常和他们的能力成正比例。18:24:1718:24:1718:248/25/2021 6:24:17 PM 11、夫学须志也，才须学也，非学无以广才，非志无以成学。8月-2118:24:1718:24Aug-2125-Aug-21 12、越是无能的人，越喜欢挑剔别人的错儿。18:24:1718:24:1718:24Wednesday, August 25, 2021 13、志不立，天下无可成之事。8月-218月-2118:24:1718:24:17August 25, 2021 14、古之立大事者，不惟有超世之才，亦必有坚忍不拔之志。25 八月 20216:24:17 下午18:24:178月-21 15、会当凌绝顶，一览众山小。八月 216:24 下午8月-2118:24August 25, 2021 1