场效应MOS管AK6602N参数+3.5A-2.7A+-30V封装SOT-23-6L.pdf免费

AK6602N AK N and P-Channel Enhancement Mode Power MOSFET Description The AK6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features N-channel P-channel ● N-Channel Schematic diagram ● V = 30V,I = 3.5A DS D RDS(ON) 58mΩ @ VGS=10V RDS(ON) 95mΩ @ VGS=4.5V ● P-Channel V = -30V,I = -2.7A DS D RDS(ON) 100mΩ @ VGS=-10V RDS(ON) 150mΩ @ VGS=-4.5V ● Low On-Resistance ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 6602N AK6602N SOT23-6L Ø180mm 8mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V T =25℃ 3.5 -2.7 A Continuous Drain Current ID A