场效应MOS管AK20H11K参数110A20V封装TO-220.pdf免费

AK20H11K AK N-Channel Enhancement Mode Power MOSFET Description The AK20H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =20V,I =110A DS D RDS(ON) 4mΩ @ VGS=10V (Typ3mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Load switching ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK20H11K AK20H11K TO-252-2L - - -Abso- lute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 110 A Drain Current-Continuous(T =100℃) I (100℃) 77 A C