场效应MOS管AK30P55F参数-30A-30V封装TO-220F.pdf免费

AK30P55F AK P-Channel Enhancement Mode Power MOSFET Description The AK30P55F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram ●V =-30V,I =-30A DS D RDS(ON) 8.5mΩ @ VGS=-10V RDS(ON) 17mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ●Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ●High side switch for full bridge converter ●DC/DC converter for LCD display 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK30P55F AK30P55F TO-220F - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -30 A Drain Current-Continuous(T =100℃) I (100℃) -21.2 A C D Drain Current-Pul