AKZE7N80S广东奥科半导体.pdf免费

AKZE7N80S 80Power MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 800 • Low figure-of-merit (FOM) Ron x Qg RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.85 • Low input capacitance (Ciss) Qg max. (nC) 0 • Reduced switching and conduction losses Qgs (nC) 4 • Ultra low gate charge (Qg) Qgd (nC) 11 • Avalanche energy rated (UIS) Configuration Single APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial TO-252 D G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25