场效应MOS管AK3407参数-4.1A-30V封装SOT-23.pdf免费

AK3407 AK P-Channel Enhancement Mode Power MOSFET Description D The AK3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. General Features S ● V = -30V,I = -4.6A DS D RDS(ON) 95mΩ @ VGS=-4.5V Schematic diagram RDS(ON) 65mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3407 Ẋ AK3407 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -4.6 A Drain Current-Pulsed (Note 1) IDM -20 A Maximum Power Dissipation