场效应MOS管AK2321参数-3.9A-20V封装SOT-23.pdf免费

AK2321 AK P-Channel Enhancement Mode Power MOSFET Description D The AK2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features ● V = -20V,I = -3.9A DS D RDS(ON) 70mΩ @ VGS=-2.5V RDS(ON) 50mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PA switch ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2321 AK2321 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current -Continuous ID -3.9 A Drain Current -Pulsed (Note 1) IDM -12 A Maximum Power Dissipation