场效应MOS管AK2N7002参数0.115A60V封装SOT-23.pdf免费

AK2N7002 AK N-Channel Enhancement Mode Power MOSFET General Features ● V = 60V,I = 0.115A DS D RDS(ON) 3Ω @ VGS=5V RDS(ON) 2Ω @ VGS=10V ● Lead free product is acquired ● Surface mount package Schematic diagram Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids,lamps, hammers,display, memories, transistors, etc. ●Battery operated systems ●Solid-state relays Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 7002 2N7002 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 0.115 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM 0.8 A Maximum Power Dissipation PD 0.2 W Operating Junction and Storage Temperature Range TJ ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 625 ℃/W Electrical