场效应MOS管AK2007N参数6.5A20V封装SOT-23-6L.pdf免费

AK2007N AK N-Channel Enhancement Mode Power MOSFET Description D 1 D 2 The AK2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G 1 G 2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S 1 S2 Schematic diagram General Features ● V = 20V,I =6.5A DS D RDS(ON) 27mΩ @ VGS=2.5V RDS(ON) 22mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2007N AK2007N SOT23-6L Ø330mm 12mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID