场效应MOS管AK6005AN参数5A60V封装SOT-23-6L.pdf免费

AK6005AN AK N-Channel Enhancement Mode Power MOSFET Description The AK6005AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =60V,I =5A DS D RDS(ON) 35mΩ @ VGS=10V (Typ.26mΩ) Schematic diagram RDS(ON) 45mΩ @ VGS=4.5V (Typ.32mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ●Hard switched and high frequency circuits ●Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 6005AN AK6005AN SOT23-6L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5 A Drain Current-Continuous(T =100℃) I (100℃) 3.5 A C D Pulsed Drain Current