AKZL100N04
N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY ®
• ThunderFET power MOSFET
VDS 40 V • Maximum 175 °C junction temperature
RDS(on) VGS = 10 V 5 mΩ • 100 % R and UIS tested
g
RDS(on) VGS = 4.5 V 6 mΩ • Material categorization:
ID 110 A for definitions of compliance please see
Configuration Single
D
TO-263
G
S
S S
D
D
G
G N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
C
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 40
您可能关注的文档
- 场效应MOS管AK1505S参数5.2A150V封装SOP-8.pdf
- 场效应MOS管AK1805S参数5A180V封装SOP-8.pdf
- 场效应MOS管AK2012参数12A20V封装SOP-8.pdf
- 场效应MOS管AK2014ES参数14A20V封装SOP-8.pdf
- 场效应MOS管AK2025S参数25A20V封装SOP-8.pdf
- 场效应MOS管AK20NP1006S参数10A20V封装SOP-8.pdf
- 场效应MOS管AK20P09S参数-9A-20V封装SOP-8.pdf
- 场效应MOS管AK3007S参数-6.5A-30V封装SOP-8.pdf
- 场效应MOS管AK3009S参数9A30V封装SOP-8.pdf
- 场效应MOS管AK3010S参数10A30V封装SOP-8.pdf
原创力文档

文档评论(0)