场效应MOS管AK60H10参数100A60V封装TO-220.pdf免费

AK60H10 AK N-Channel Enhancement Mode Power MOSFET Description The AK60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● V =60V,I =100A Schematic diagram DS D RDS(ON) 5.5 mΩ @ VGS=10V (Typ:4.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK60H10 AK60H10 TO-220-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 100 A Drain Cu