场效应MOS管AK1013E参数-0.66A-20V封装SOT-23.pdf免费

AK1013E AK P-Channel Enhancement Mode Power MOSFET Description The AK1013E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● V = -20V,I =-0.66A DS D RDS(ON) 520mΩ @ VGS=-4.5V Schematic diagram RDS(ON) 700mΩ @ VGS=-2.5V RDS(ON) 1000mΩ @ VGS=-1.8V ESD Rating : HBM 2000V ● High power and current handing capability ● Lead free product is acquired ● Gate-Source ESD protection Application ● Battery operated systems ● Load/ power switching cell phones pagers ● Power supply converter circuits Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 1013E Ẋ AK1013E SOT-23 Ø180mm 8 mm 3000units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -0.66 A Drain Current-Pulsed (Note 1) IDM -3 A Maximum Power Dissipation