AKZMB4N65广东奥科半导体.pdf免费

AKZMB4N65 N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Q Results in Simple Drive VDS (V) 650 g Requirement RDS(on) (Ω) VGS = 10 V 2.5 • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 19 and Current Configuration Single • Compliant to RoHS directive 2002/95/EC TO-220 FULLPAK D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650