场效应MOS管AK60H10F参数100A60V封装TO-220F.pdf免费

AK60H10F AK N-Channel Enhancement Mode Power MOSFET Description The AK60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature ● V =60V,I =100A DS D RDS(ON) 6.5mΩ @ VGS=10V (Typ:5.7mΩ) Schematic diagram ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK60H10F AK60H10F TO-220F - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 100 A Drain Current-Continuous(T =100℃) I (100℃) 70 A