RB551V-30 SOD-323广东奥科半导体.pdf免费

RB551V-30 SOD-323 ■SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE ■Features • Small surface mounting type • Ultra low VF • High reliability ■Applications 1.Cathode 2.Anode • High frequency rectification switching regulation ■Simplified outline(SOD-323) Top View ■Marking Marking D ■Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 30 V DC Reverse Voltage VR 20 V Mean Rectifying Current IO 0.5 A Peak Forward Surge Current (60 Hz for 1 Cyc.) IFSM 2 A Junction Temperature Tj 125 OC Storage Temperature Range Ts - 40 to + 125 OC ■Characteristics at Ta = 25 OC Parameter Symbol Max. Unit Forward Voltage at IF = 100 mA VF 0.36 V at IF = 500 mA 0.47 Reverse Current