场效应MOS管AK60P40参数-40A-60V封装TO-220.pdf免费

AK60P40 AK P-Channel Enhancement Mode Power MOSFET Description The AK60P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =-60V,I =-40A DS D RDS(ON) 23mΩ @ VGS=-10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK60P40 AK60P40 TO-220-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -40 A Drain Current-Continuous(T =100℃) I (100℃) -28.3 A C D Pulsed Drain Cu