AKZF2N65S广东奥科半导体.pdf免费

AKZF2N65S 65Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 650 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω) VGS = 10 V 2.3 f = 60 Hz) Qg (Max.) (nC) 31 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 4.6 • Dynamic dV/dt Rating • Low Thermal Resistance Qgd (nC) 17 • Lead (Pb)-free Available Configuration Single TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage