场效应MOS管AK2N7002K参数0.3A60V封装SOT-23.pdf免费

场效应MOS管AK2N7002K参数0.3A60V封装SOT-23.pdf

AK2N7002K AK N-Channel Enhancement Mode Power MOSFET General Features ● V = 60V,I = 0.3A DS D RDS(ON) 3Ω @ VGS=4.5V RDS(ON) 2.2Ω @ VGS=10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD Rating :HBM ≥1500V Schematic diagram Application ● Direct logic-level interface: TTL/CMOS ● Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. ● Battery operated systems ● Solid-state relays Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 7002K 2N7002K SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V T =25 ℃ 0.3 A Continuous Drain Current (T =150 ℃) I A J D T =100 ℃ 0.19

文档评论(0)

1亿VIP精品文档

相关文档