场效应MOS管AK3400X参数5.1A30V封装SOT-23.pdf免费

AK3400X AK N-Channel Enhancement Mode Power MOSFET Description D The AK3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S General Features Schematic diagram ● V = 30V,I = 5.1A DS D RDS(ON) 55mΩ @ VGS=2.5V RDS(ON) 39mΩ @ VGS=4.5V RDS(ON) 33mΩ @ VGS=10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● PWM applications ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3400X Ḃ AK3400X SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 5.1 A Drain Current-Pulsed (Note 1)