场效应MOS管AK3134参数0.75A20V封装SOT-23.pdf免费

AK3134 AK N-Channel Enhancement Mode Power MOSFET Description The AK3134 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● V = 20V,I =0.75A Schematic diagram DS D RDS(ON) 380mΩ @ VGS=4.5V RDS(ON) 450mΩ @ VGS=2.5V RDS(ON) 800mΩ @ VGS=1.8V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3134 AK3134 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID 0.75 A Drain Current-Pulsed (Note 1) IDM 1.8 A Maximum Power Dissipation PD 0.35 W Operating Junction and Storage Temperature Range TJ ,TSTG