场效应MOS管AK2309参数-1.6A-60V封装SOT-23.pdf免费

AK2309 AK P-Channel Enhancement Mode Power MOSFET Description The AK2309 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● V =-60V,I =-1.6A DS D RDS(ON) 160mΩ @ VGS=-10V Schematic diagram RDS(ON) 200mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Load switch ● PWM application Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2309 Ẋ AK2309 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -1.6 A Pulsed Drain Current (Note 1) IDM -8 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ ,TSTG -55 To 150