场效应MOS管AK2323参数-4.1A-20V封装SOT-23.pdf免费

AK2323 AK P-Channel Enhancement Mode Power MOSFET Description The AK2323 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram ● V = -20V,I = -4.1A DS D RDS(ON) 60mΩ @ VGS=-2.5V RDS(ON) 45mΩ @ VGS=-4.5V ●High power and current handing capability ● Surface mount package ●Pb free terminal plating Application ● PWM applications ● Load switch ●Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2323Ẋ AK2323 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V T =25 ℃ -4.1 C Continuous Drain Current ID A T =70 ℃ -3.2 C Drain Current -Pul