场效应MOS管AK2312A参数5A20V封装SOT-23.pdf免费

AK2312A AK N-Channel Enhancement Mode Power MOSFET Description D The AK2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram ● V = 20V,I = 5A DS D RDS(ON) 35mΩ @ VGS=2.5V RDS(ON) 28mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2312A AK2312A SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID 5 A Drain Current-Pulsed (Note 1)