场效应MOS管AK2312参数4.5A20V封装SOT-23.pdf免费

AK2312 AK N-Channel Enhancement Mode Power MOSFET Description D The AK2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S General Features Schematic diagram ● V = 20V,I = 4.5A DS D RDS(ON) 40mΩ @ VGS=2.5V RDS(ON) 33mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery protection ●Load switch ●Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2312 AK2312 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V T =25 ℃ 4.5 A Continuous Drain Current