AKZF2N70S广东奥科半导体.pdf免费

AKZF2N70S N-Channel 00 V (D-S) Supper Junction Power MOSFET 7 FEATURES PRODUCT SUMMARY • Low Gate Charge Q Results in Simple Drive VDS (V) 700 g Requirement RDS(on) (Ω) VGS = 10 V 2.4 • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 15 Ruggedness Qgs (nC) 3 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 6 and Current Configuration Single • Compliant to RoHS directive 2002/95/EC TO-251 D G Drain Connected to Drain-Tab S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage