场效应MOS管AKBSS138参数0.22A50V封装SOT-23.pdf免费

AKBSS138 AK N-Channel Enhancement Mode Power MOSFET General Features ● V = 50V,I = 0.22A DS D RDS(ON) 3Ω @ VGS=5V RDS(ON) 2Ω @ VGS=10V ● Lead free product is acquired Schematic diagram ● Surface mount package Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers , display, memories, transistors, etc. ●Battery operated systems ●Solid-state relays Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 138 AKBSS138 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 0.22 A Drain Current-Pulsed (Note 1) IDM 0.88 A Maximum Power Dissipation PD 0.35 W Operating Junction and Storage Temperature Range TJ ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 350 ℃/W Electrical Characteristics (