AKZMB4N60广东奥科半导体.pdf免费

AKZMB4N60 Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 600 • Reduced Gate Drive Requirement RDS(on) () VGS = 10 V 2.2 • Enhanced 30 V, VGS Rating Qg (Max.) (nC) 39 • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-251 TO-220AB TO-220 FULLPAK D TO-252 G S G D S G D S G D S G D S N-Channel MOSFET Top View