场效应MOS管AK30H15参数150A30V封装TO-220.pdf免费

AK30H15 AK N-Channel Enhancement Mode Power MOSFET Description The AK30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =30V,I =150A DS D RDS(ON) 3.0 mΩ @ VGS=10V Schematic diagram RDS(ON) 4.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK30H15 AK30H15 TO-220-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 150 A Drain Current-Continuous(T =100℃) I (100℃) 105