场效应MOS管AK0224AF参数24A200V封装TO-220F.pdf免费

AK0224AF AK N-Channel Enhancement Mode Power MOSFET Description The AK0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =200V,I =24A DS D RDS(ON) 80mΩ @ VGS=10V (Typ:62mΩ) ● High density cell design for ultra low Rdson Schematic diagram ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK0224AF AK0224AF TO-220F - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 24 A Drain Current-Continuous(T =100℃) I (100℃) 16.5 A C