场效应MOS管AK01H21T参数210A100V封装TO-247.pdf免费

AK01H21T AK N-Channel Enhancement Mode Power MOSFET Description The AK01H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features ● V =100V,I =210A Schematic diagram DSS D RDS(ON) 4.0mΩ @ VGS=10V （Typ ：3.1 mΩ） ● Good stability and uniformity with high EAS ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● DC motor drive ● High efficiency synchronous rectification in SMPS ● Uninterruptible power supply ● High speed power switching ● Hard switched and high frequency circuits 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK01H21T AK01H21T TO-247 - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 210 A Drain Current-Continuous(T =100℃) I (100℃)