10L100SP TO-277
Trench MOS Barrier Schottky Rectifier
Reverse Voltage - 100 V
Forward Current - 10 A
FEATURES
Advanced trench technology
Low forward voltage drop
Low power losses
High efficiency operation
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: TO-277
Terminals: Solderable per MIL-STD-750, Method 2026
TO-277
Maximum Ratings (Per Leg) at Ta=25°C unless otherwise specified
Parameter Symbols Value Units
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum RMS voltage VRMS 100 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current Per diode IF(AV) 10 A
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
IFSM 200 A
superimposed on rated load per diode
Operating Temperature Range TJ -55 ~ +150 °C
Storage Temperature Range TSTG -55 ~ +150 °C
Typical Thermal Resistance Per diode(munted on
您可能关注的文档
- 广东奥科半导体GBU1501-GBU1502-GBU1504-GBU1506-GBU1508-GBU1510-GBU.pdf
- 场效应MOS管AK60P40F参数-40A-60V封装TO-220F.pdf
- 广东奥科半导体GBU1001G-GBU1002G-GBU1004G-GBU1006G-GBU1008G-GBU1010G-GBU.pdf
- 广东奥科半导体GBU1001-GBU1002-GBU1004-GBU1006-GBU1008-GBU1010-GBU.pdf
- 场效应MOS管AK70H10F参数100A70V封装TO-220F.pdf
- 广东奥科半导体GBL401-GBL410-GBL.pdf
- 广东奥科半导体GBJ801G-GBJ802G-GBJ804G-GBJ806G-GBJ808G-GBJ810G-GBJ.pdf
- 广东奥科半导体GBJ801-GBJ802-GBJ804-GBJ806-GBJ808-GBJ810-GBJ.pdf
- 广东奥科半导体GBJ601-GBJ602-GBJ604-GBJ606-GBJ608-GBJ610-GBJ.pdf
- 广东奥科半导体GBJ5001G-GBJ5002G-GBJ5004G-GBJ5006G-GBJ5008G-GBJ5010G-GBJ.pdf
最近下载
- 山东省地震局招聘考试真题2024.docx VIP
- 2026年鹤壁职业技术学院单招职业适应性考试题库完整.docx VIP
- 2025年南京市中考语文试题卷(含答案解析).docx
- 2026年入党积极分子考试题库附答案【精练】.docx VIP
- 储能电站基础知识培训.docx
- 《GB6441-2025生产安全事故分类与编码》修改对比解析.pptx
- 部编年小学语文一年级下册看拼音写词语.doc VIP
- (正式版)HG-T 21633-2024 玻璃钢管和管件选用规定.pdf VIP
- 第2课 巩固人民民主政权 大单元教学课件 2026人教版历史八年级下册.ppt
- 2021款吉利领克01_汽车使用手册用户操作图示驾驶指南车主车辆说明书电子版.pdf
原创力文档

文档评论(0)