低压氮化镓器件谐振驱动技术及其反向导通特性_赵清林.pdfVIP

2019 年 6 月 电 工 技 术 学 报 Vol.34 Sup.1 第 34 卷增刊 1 TRANSACTIONS OF CHINA ELECTROTECHNICAL SOCIETY Jun. 2019 DOI: 10.19595/ki.1000-6753.tces.L80320 低压氮化镓器件谐振驱动技术及其 反向导通特性 赵清林 崔少威 袁 精 王德玉 （燕山大学电力电子节能与传动控制河北省重点实验室 秦皇岛 066004 ） 摘要 继硅（Si ）和砷化镓（GaAs ）之后，半导体材料出现了第三代以氮化镓（GaN ）为代 表的宽禁带半导体材料，其特点包括临界击穿电场高、饱和电子速度高、电子密度高、电子迁移 率高及导热率高等，是一种适用于高频、高压、高温、大功率的抗辐射等级高的半导体材料。由 于GaN 器件的开关特性、驱动技术及损耗机制相比 Si MOSFET 有显著差异，如何实现合理的驱 动，对发挥其优势至关重要。以同步 Buck 变换器为例提出一种谐振驱动技术，并给续流管栅极 加一偏置电压，以减小反向压降、提高效率。实验结果表明，此谐振驱动技术可有效提高驱动的 可靠性，加载偏置电压后变换器的效率也可得到有效提高。 关键词：氮化镓 谐振驱动 偏置电压 同步Buck 中图分类号：TM46 Resonant Drive Technology and Reverse Conduction Characteristics of Low Voltage GaN Devices Zhao Qinglin Cui Shaowei Yuan Jing Wang Deyu （Hebei Key Laboratory of Power Electronics Energy Saving and Transmission Control Yanshan University Qinhuangdao 066004 China ） Abstract After silicon (Si) and gallium arsenide (GaAs), semiconductor material has third generation of wide band gap semiconductor materials represented by gallium nitride (GaN). Its characteristics include high critical breakdown electric field, high saturation electron speed, high electron density, high electron mobility and high thermal conductivity. It is suitable for high frequency, high pressure and high temperature, high power semiconductor materials with high radiation resistance. Because the switching characteristics, driving technology and loss mechanism of GaN devices have significant differences compared with the Si MOSFET, how to realize the rational drive method is very