功率场效应管选择场效应管及电路设计的考虑.pdfVIP

Power MOSFET Selecting MOSFFETs and Consideration for Circuit Design Application Note Power MOSFET Selecting MOSFFETs and Consideration for Circuit Design Description This document explains selecting MOSFETs and what we have to consider for designing MOSFET circuit, such as temperature characteristics, effects of wire inductance, parasitic oscillations, avalanche ruggedness, and snubber circuit. © 20 17 - 2018 1 2018-07-26 Toshiba Electronic Devices Storage Corporation Power MOSFET Selecting MOSFFETs and Consideration for Circuit Design Application Note Table of Contents Description1 Table of Contents 2 1. Selecting MOSFETs3 1.1. Voltage and Current Ratings 3 1.2. Considerations for VGS 3 1.3. Switching Speed 4 2. Considerations for MOSFET Circuit Design5 2.1. Temperature Characteristics of Power MOSFETs 5 2.2. Switching Time and Drive Conditions 6 2.3. Effects of Wire Inductance 6 2.4. Parasitic Oscillations 7 2.5. Use of a Source-Drain Diode 8 2.6. Avalanche Ruggedness 9 2.7. Parallel Connections 10 2.8. Snubber Circuit 11 2.8.1. Snubber for a flyback converter 11 2.8.2. General turn-off snubber 14 RESTRICTIONS ON PRODUCT USE18 © 20 17 - 2018 2 2018-07-26 Toshiba Electronic Devices Storage Corporation Power MOSFET Selecting MOSFFETs and